# Analysis of photoelastic properties of monocrystalline silicon

Photoelasticity is considered a useful measurement tool for the non-destructive and contactless determination of mechanical stresses or strains in the production of silicon wafers. It describes a change in the indices of refraction of a material when the material is mechanically loaded. As silicon has a diamond lattice structure, the stress-dependent change in the refractive indices varies with the loading direction. In this work, an anisotropic stress-optic law is derived, and the corresponding stress-optical parameters are measured using a Brazilian disc test. The parameters were determined to be inline-formula $M1inlinescrollmathml\left({\mathrm{italic \pi }}_{normal 11}-{\mathrm{italic \pi }}_{normal 12}\right)=normal 14.4\cdot {normal 10}^{-normal 7}$ 114pt15ptsvg-formulamathimg73f78fd9f4f70b6d679a30b05037b11b jsss-9-209-2020-ie00001.svg114pt15ptjsss-9-209-2020-ie00001.png  MPainline-formula−1 and inline-formula $M3inlinescrollmathml{\mathrm{italic \pi }}_{normal 44}=normal 9.4\cdot {normal 10}^{-normal 7}$ 74pt15ptsvg-formulamathimg07fb3e6ffb9fda80dab331b044aa14b1 jsss-9-209-2020-ie00002.svg74pt15ptjsss-9-209-2020-ie00002.png  MPainline-formula−1. The results of this work are compared to previous works found in the literature, and the deviations are discussed.

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Stoehr, Markus / Gerlach, Gerald / Härtling, Thomas / et al: Analysis of photoelastic properties of monocrystalline silicon. 2020. Copernicus Publications.

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